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Mos capacitor simulation for semiconductor gate-oxide capacitance extraction
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About the MOS Capacitor Simulation for semiconductor gate-oxide capacitance extraction Project
The model represents a metal gate over a thin SiO2 layer with a grounded silicon contact beneath the oxide. NumericalAI's computational electromagnetic solver solves the electrostatic field distribution and extracts the gate capacitance. The result gives C ≈ 0.837 pF, close to the ideal oxide-capacitance estimate, with additional contribution from 3D fringing fields around the gate edges. A practical benchmark for semiconductor device modeling, gate-stack analysis, parasitic extraction, and process-aware capacitance studies.
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July 13th, 2026 Uploaded
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